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  functional description and application the monolithic integrated circuit mgm 3000x is especially suitable as a modulator for the 48 to 860 mhz frequency range. video recorders, cable converters, tv-converter networks, demodulators, video generators, video security systems, amateur tv-applications and personal computers. circuit description oscillator the rf-oscillator is available at pins 3 - 7. the oscillator operates as a symmetrical colpitts circuit. the oscillator chip ground, pin 5, should be connected to ground at the resonance circuit shielding point. an external oscillator can be injected inductively or capacitively via pins 3 and 7. the layout of the pcb should be such as to provide a minimum shielding attenuation between the oscillator pins 3 - 7 and modulator output pins 15 - 17 of approximately 80 db. type ordering code package mgm 3000x q67000-a5179 p-dso-20-1 (smd) mgm 3000x Q67006-A5179 p-dso-20-1 tape & reel (smd) video modulator for fm/am-audio bipolar ic mgm 3000x p-dso-20-1 features l fm- and am-audio modulator l audio carrier output for suppression of harmonics l sync level clamping of video input signal l controlling of peak white value l continuous adjustment of modulation depth for positive or negative values l symmetrical mixer output with separate ground area l symmetrical oscillator with separate rf-ground l low spurious radiation l high stability of the rf-oscillator frequency l high stability of the audio oscillator l internal reference voltage l 12 v supply voltage semiconductor group 1 12.94
semiconductor group 2 mgm 3000x for optimal residual carrier suppression, the symmetrical mixer outputs at pins 15, 17 should be connected to a matched balanced-to-unbalanced broadband transformer, e.g. a guanella transformer with good phase precision at 0 and 180 . the transmission loss should be less than 3 db. in addition, an lc-low pass filter combination is required at the output. the cut-off frequency of the low pass filter combination must exceed the maximum operating frequency. video the video signal with the negative synchronous level is capacitively connected to pin 12. the internal clamping circuit is referenced to the synchronizing level. should the video signal change by 6 db, this change will be compensated by the resonance circuit which is set by the peak white value. at pin 13, the current pulses of the peak white detector are filtered through the capacitor which also determines the control time constant. the rf-carrier switches from negative to positive video modulation, when pin 14 is connected to ground. by varying the value of resistance r at pin 14 between 0 w the modulation depth can be increased from 70 % to 100 % when the modulation is negative and decreased from 100 % to 70 % when the modulation is positive. audio via pin 1, the audio signal is capacitively coupled to the af-input for the fm-modulation of the oscillator. a parallel resonance circuit is connected to the audio carrier oscillator at pins 19, 20. the unloaded q of the resonant circuit must be q = 25 and the parallel resistor r t = 6.8 k w to ensure a video to audio carrier ratio of 12.5 db. at the same time, capacitative and/or inductive reactance for the resonance frequency should have a value of x c ? x l ? 800 w. via pin 18, the audio signal is capacitively coupled to the af-input for the am-modulation of the oscillator. this signal is forwarded to a mixer which is influenced by the am- modulation input of pin 18. the video to audio carrier ratio can be changed by connecting an external voltage to pin 18, which deviates from the internal reference voltage. through an additional external dc voltage at pin 18, the set am-modulation index can be changed by overriding the internally adjusted control voltage for a fixed am-modulation index. at the output of the above described mixer the fm and/or am modulated audio signal is added to the video signal and mixed with the oscillator signal in the rf-mixer. for optimal suppression of harmonics of the audio carrier an audio filter should be connected between pin 10 and 11. source the internal reference voltage is available at pin 2 and has to be capactively blocked there.
mgm 3000x semiconductor group 3 pin configuration (top view)
semiconductor group 4 mgm 3000x pin definitions and functions pin no. symbol function 1 fm-audio af-input for fm-modulation 2 v ref internal reference voltage (7.5 v) 3 osc-input 1 symmetrical oscillator input 4 osc-out 1 symmetrical oscillator output 5 osc-ground oscillator ground 6 osc-out 2 symmetrical oscillator output 7 osc-input 2 symmetrical oscillator input 8 v s supply voltage (12 v) 9 n.c. not connected 10 audio out 1 audio output; symmetrical inputs for audio filter 11 audio out 2 audio output; symmetrical inputs for audio filter 12 video video input with clamping 13 video-cap. connection for smoothing capacitor for video control loop 14 modulation switch-over for positive and negative modulation 15 output 2 symmetrical rf-output 16 ground ground 17 output 1 symmetrical rf-output 18 am-audio video to audio carrier ratio adjustment and af-input for am-modulation 19 fm-audio osc fm-audio oscillator, symmetrical inputs for tank circuit 20 fm-audio osc fm-audio oscillator, symmetrical inputs for tank circuit
mgm 3000x semiconductor group 5 block diagram
semiconductor group 6 mgm 3000x absolute maximum ratings t a = 0 to 70 c parameter symbol limit values unit remarks min. typ. max. supply voltage pin 8 v s - 0.3 14.5 v current from pin 2 - i 2 0 2ma v 2 = 7-8 v, v s = 10-13.5 v voltage at pin 1 voltage at pin 2 voltage at pin 12 v 1 v 2 v 10 0 6 0 2 8.5 1.5 v v vpp only via c (max.1 m f) capacitance at pin 2 capacitance at pin 13 c 2 c 13 0 0 100 15 nf m f voltage at pin 14 voltage at pin 15 voltage at pin 17 voltage at pin 18 v 14 v 15 v 17 v 18 - 0.3 v 2 v 2 v 2 - 1.5 1.4 13.5 13.5 v 2 + 1.5 v v v v v s = 10-13.5 v according to the application circuit, only the provided circuitry can be connected to pins 3, 4, 6, 7, 10, 11, 18 and 20. junction temperature t j 150 c storage temperature t stg C 40 125 c thermal resistance r th 80 k/w operating range supply voltage v s 10 13.5 v video input frequency f video 0 6 mhz audio input frequency f af 0 20 khz output frequency f q 30 860 mhz depending on the oscillator circuitry at pins 3-7 ambient temperature t a 080 c
mgm 3000x semiconductor group 7 audio oscillator f osc 4 7 mhz voltage at pin 2 voltage at pin 15, 17 v 2 v 15, 17 7 v 2 7.50 v s v v ac/dc characteristics t a =25 c; v s =12v parameter symbol limit values unit test condition test circuit min. typ. max. source current consumption current consumption i 8 i 15 + i 17 15 2.0 20 2.6 26 3.4 ma ma i 2 = 0 ma 1 reference voltage v 2 7.00 7.25 7.50 v 0 i 2 1ma 1 oscillator oscillator frequency range f osc 30 860 mhz external circuitry adjusted to frequency switch-on, warm up drift tc-value of capacitor in osc. circuit is 0; drift is referenced only to selfheating of the component. d f osc 0 0 C50 C 200 C 500 C 500 khz khz t = 0.5-10 s; t a = const. ch 30 ch 40 1 1 frequency drift as function of v s d f osc C 150 150 khz v s = 10-13.5 v t a = const.; ch 40 1 rf-output impedance r 15 ; r 17 c 15 ; c 17 10 0.5 1 2.0 k w pf parallel equivalent circuit parallel equivalent circuit 1 1 absolute maximum ratings (contd) t a =0to70 c parameter symbol limit values unit remarks min. typ. max.
semiconductor group 8 mgm 3000x rf-output voltage v q 2.5 4.5 5.5 mvrms ch 60; video 100 % white; without audio- signal 1 rf-output phase a 15, 17 140 180 220 deg rf-output voltage changes d v q d v q d v q 0 0 0 1.5 1.5 1.5 db db db f = 743.25- 823.25 mhz d f = 80 mhz; ch 55-65 f = 100-300 mhz f = 48-100 mhz 1 1 1 intermodulation ratio a imr 60 75 db f vc + 1.07 mhz f vc + 1.57 mhz f vc + 2.07 mhz 2 harmonic wave ratio a o 60 db f vc + 8.8 mhz f vc + 13.29 mhz f vc + 17.72 mhz, without video 2 13, 14, 15 unmodulated video and audio carrier, measured with the spectrum analyzer as difference between video carrier signal level and sideband signal level; loaded q factor q l of the audio oscillator resonance circuit adjusted by r p to provide the required video to audio carrier ratio of 12.5 db; q u = 25. video to audio carrier ratio a v/a 10 12.5 15 db f vc + f ac (5.5 mhz) 1 harmonic wave ratio harmonic wave ratio a o a o 60 80 db db f vc +2 f ac (11 mhz) f vc +3 f ac (16.5 mhz) 1 1 ac/dc characteristics (contd) t a =25 c; v s =12v parameter symbol limit values unit test condition test circuit min. typ. max.
mgm 3000x semiconductor group 9 all remaining harmonic waves; multiple of funda- mental wave of video carrier, without video signal, measured with spectrum analyzer; f vc = 523.25- 623.25 mhz; pin 14 open. a 15 db 1 residual carrier suppression a r 32 db ch 30 40 3 signal-to-noise in video; unmodulated audio carrier a n/v 48 74 db ch 60 4 interference product ratio audio in video am-modulation fm-modulation of audio carrier a a/v a a/v 49 48 62 60 db db ch 60; m a =90% ch 60; 35 khz 4 4 unweighted am unweighted fm interference level ratio video in audio a v/a a v/a 48 48 54 54 db db ch 39; test picture fubk ch 39; test picture fubk 5 5 signal-to-noise ratio of audio oscillator a n/a a n/a 48 48 54 54 db db am unmodulated fm video carrier 5 5 video video input current at pin 12 Ci 12 01 m a c 12 100 nf 1 video input voltage at pin 12 v 12 0.7 1.4 vpp c 12 100 nf 1 ac/dc characteristics (contd) t a =25 c; v s =12v parameter symbol limit values unit test condition test circuit min. typ. max.
semiconductor group 10 mgm 3000x modulation depth m d/n m d/p 70 80 90 98 % % staircase signal at video input; v video = 1 vpp 6 stability of mod. depth stability of mod. depth stability of mod. depth d m d d m d d m d 1 1 1 2.5 2.0 2.0 % % % d v video = 1 vpp 3 db; t a = 0-60 c v s = 10-13.5 v 6 6 6 differential gain a dif 10 % 7 differential phase f dif 15 deg measured with measurement demodulator, video test signals and vector scope 7 amplitude response of video signal; v video = 1 vpp with additional modulation f = 15 khz-5 mhz sine signal between black and white. a v 0 1.5 db 8 period of time required for peak white detector to reach steady state for full modulation depth with 1-white pulse per half frame when control is already in the steady state. t 650 m s c at pin 13 = 10 m f i leakage 2 m a 1 setting time for video signal change from 0 vpp to 1.4 vpp, video blanking signal content is uniform white level. t 120 500 m s1 ac/dc characteristics (contd) t a =25 c; v s =12v parameter symbol limit values unit test condition test circuit min. typ. max.
mgm 3000x semiconductor group 11 setting time for video blanking signal from 100 % white level to 42 % grey level with subsequent rise in grey level to 71 % of video blanking signal (due to decontrol process). t 0.4 2 10 min 1 audio audio oscillator frequency range; unloaded q factor of resonance circuit q u = 25; f resonance = 5.5 mhz. f a/osc 4 7 mhz 1 switch-on, warm-up drift of oscillator frequency; tc-value of capacitor in audio oscillator circuit is 0, the drift is only based on self-heating of component. d f a/osc 5 khz t a = const.; > 5 s after switching on 1 audio signal frequency devitation d f a/osc 5 khz v s =12v 10 % q u =25 1 am-audio am-mod. factor m 50 70 % v af = 90 mvrms 9 am-mod.; total harmonic distortion thd am 0.5 3 % m =80%; v af = 117 mvrms; f af = 1 khz 9 audio preamplifier input impedance z 18 25 50 75 k w 1 ac/dc characteristics (contd) t a =25 c; v s =12v parameter symbol limit values unit test condition test circuit min. typ. max.
semiconductor group 12 mgm 3000x am-audio modulator input voltage v af 132 mvrms m =90%; f af = 1 khz 9 residual carrier fm; am-operation d f 20 hz without am-audio signal q u =25 1 fm-audio fm-mod.; total harmonic distortion thd fm 0.6 1.5 % v 1 = 150 mvrms 9 fm-mod.; static mod. characteristic d f a/osc 150 210 270 khz d v af = v 1 C v 2 = 1v 1 fm-mod.; dynamic mod. characteristic d? f a/osc / d v af 0.30 0.25 0.36 0.33 0.36 0.30 0.44 khz/mv khz/mv khz/mv bin 1 bin 2 bin 3 1 audio preamplifier input impedance (dynamic); fm-operation z 1 200 k w 1 overshoot overshoot 1 % 15-khz video signal ac/dc characteristics (contd) t a =25 c; v s =12v parameter symbol limit values unit test condition test circuit min. typ. max.
mgm 3000x semiconductor group 13 test circuit 1 test and measurement circuit for am- and fm-audio carrier and negative video modulation
semiconductor group 14 mgm 3000x test circuit 2 description of the measurement configuration to measure the moire cc-level lies below the activation point and has been set to provide a ratio of 17 db with respect to the video carrier. f vc = 623.25 mhz
mgm 3000x semiconductor group 15 test circuit 3 description of the measurement configuration to measure the residual carrier suppression
semiconductor group 16 mgm 3000x test circuit 4 description of the measurement configuration to measure the audio and/or noise in video during fm- and am-modulation of the audio carrier calibration: af-signals are switched off, video signal is present at video input, modulation measure- ment device set at am is adjusted to video carrier; filter: 300 hz 20 khz; detector: (p + p)/2; wave analyzer at video signal level (16 khz) adjusted and resultant level as reference a v defined. 1. measurement of audio interference product ratio in video while the audio carrier fm modulated: af-signal is connected to fm-audio input; video signal is present at video input; modulation measurement device set at am; filter: 300 hz 20 khz; detector: (p + p)/2; the automatic rf-level position of the measurement device is switched off; wave analyzer at video signal level 1 khz or 2 khz or 3 khz adjusted and resultant level is set to a a . the audio noise ratio in video results from a a/v = a a C a v (db). 2. measurement of signal-to-noise ratio in video without fm-modulation of audio carrier: af-signals are switched off; video signal is switched on; modulation measurement device set at am; filter: 300 hz 3 khz; detector; rms ? 2; wave analyzer at video signal level (16 khz) detuned; read out in db to reference level of calibration is a n/v ; 3. the noise limit of the measurement device is approx. 85 db.
mgm 3000x semiconductor group 17 test circuit 5 description of the measurement configuration to measure the video and or noise in audio calibration: af-signal of f = 1 khz, corresponding with a nominal deviation of 30 khz, is connected to the audio input, and the demodulated af-reference level at the audio measurement device is defined as 0 db. no video signal is present. measuring: 1. the af-signal is switched off and the fubk-video signal is connected to the video input with v video = 1 vpp. the audio level is relation to the af-reference calibration level is measured as ratio a v/a . 2. af-and video signals are switched off. the noise ratio in relation to the af-reference calibration level is measured as signal-to-noise ratio in the audio signal a n/a .
semiconductor group 18 mgm 3000x test circuit 6 description of the measurement configuration to measure the modulation depth for positive and negative modulation calibration: a zero reference signal with the tv measuring receiver is given to the video signal. a video signal with v video = 1 vpp is connected to the video input. measuring: 1. modulation depth m d/n for negative modulation: pin 14 open, range peak white value-sync level in relation to range zero reference-sync level gives m d/n . 2. modulation depth m d/p for positive modulation: pin 14 to ground, range peak white value-sync level in relation to range zero reference-peak white value gives m d/p .
mgm 3000x semiconductor group 19 test circuit 7 description of the measurement configuration to measure the differential gain and phase
semiconductor group 20 mgm 3000x test circuit 8 description of the measurement configuration to measure the video amplitude response
mgm 3000x semiconductor group 21 test circuit 9 description of the measurement configuration to measure the harmonic distorsion factor and am-input voltage
semiconductor group 22 mgm 3000x diagram function of video signal connection. a) demodulated rf-output video signal v 15/17rms = f ( v 12rms ); f mod = 16 khz b) v 13 = f ( v 12rms )
mgm 3000x semiconductor group 23 plastic package, p-dso-20-1 (smd) (plastic dual small outline) gps05094 sorts of packing package outlines for tubes, trays etc. are contained in our data book package information dimensions in mm smd = surface mounted device


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